Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same

摘要

A strained Si—SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer 14 on an SOI substrate 10 having an Si layer 13 and a buried oxide film 12; forming protective films 15, 16 on the surface of the SiGe mixed crystal layer 14; implanting light element ions into a vicinity of the interface between the Si layer 13 and the buried oxide film 12; performing a first heat treatment at a temperature in the range of 400 to 1000° C.; performing a second heat treatment at a temperature not lower than 1050° C. under an oxidizing atmosphere; performing a third heat treatment at a temperature not lower than 1050° C. under an inert atmosphere; removing the Si oxide film 18 formed on the surface; and forming a strained Si layer 19.