Content addressable memory cell and content addressable memory using phase change memory

摘要

According to an example embodiment, a CAM cell included in a CAM may include a phase change memory device, a connector, and/or a developer. The phase change memory device may be configured to store data. The phase change memory device may have a resistance that may be varied according to the logic level of the stored data. The connector may be configured to control writing data to the phase change memory device and reading data from the phase change memory device. The developer may be configured to control reading data from the phase change memory device in a search mode in which the data stored in the phase change memory device is compared to the search data.