首页> 外国专利> Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system

Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system

机译:表面发射半导体激光器,制造表面发射半导体激光器的方法,模块,光源设备,数据处理设备,光发送设备,光学空间传输设备和光学空间传输系统

摘要

A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed between the lower reflective mirror and the upper reflective mirror, and a current confining layer formed between the lower reflective mirror and the upper reflective mirror. The active layer emits light. The upper reflective mirror forms a resonator between the lower reflective mirror and the upper reflective mirror. In the optical mode controlling layer, an opening is formed for selectively absorbing or reflecting off light that is emitted in the active layer. The optical mode controlling layer optically controls mode of laser light. The current confining layer confines current that is applied during driving.
机译:表面发射半导体激光器包括基板,在基板上形成的下反射镜,在下反射镜上形成的有源层,在有源层上形成的上反射镜,在下反射镜与半导体层之间形成的光学模式控制层。上部反射镜,在下部反射镜与上部反射镜之间形成电流限制层。有源层发光。上反射镜在下反射镜和上反射镜之间形成谐振器。在光学模式控制层中,形成用于选择性地吸收或反射在有源层中发射的光的开口。光学模式控制层光学地控制激光的模式。电流限制层限制在驱动期间施加的电流。

著录项

  • 公开/公告号US7944957B2

    专利类型

  • 公开/公告日2011-05-17

    原文格式PDF

  • 申请/专利权人 TEIICHI SUZUKI;DAISUKE NAGAO;

    申请/专利号US20070946327

  • 发明设计人 TEIICHI SUZUKI;DAISUKE NAGAO;

    申请日2007-11-28

  • 分类号H01S5;

  • 国家 US

  • 入库时间 2022-08-21 18:11:20

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