首页> 外国专利> Apparatus for plasma-enhanced chemical vapor deposition (PECVD) of an internal barrier layer inside a container, said apparatus including a gas line isolated by a solenoid valve

Apparatus for plasma-enhanced chemical vapor deposition (PECVD) of an internal barrier layer inside a container, said apparatus including a gas line isolated by a solenoid valve

机译:用于容器内部的内部阻挡层的等离子体增强化学气相沉积(PECVD)的设备,所述设备包括由电磁阀隔离的气体管线

摘要

A machine (1) for depositing a thin layer of a barrier-effect material inside a container (2) by plasma-enhanced chemical vapor deposition, said machine (1) comprising: a processing unit (4) receiving the container (2) and equipped with an electromagnetic wave generator (11); a precursor gas outlet (17); an injector (13) for injecting said precursor gas into the container (2), said injector (13) having a bottom end (14) that opens out into the container (2) and an opposite top end (15); a precursor gas feed duct (20) that puts the precursor gas outlet (17) into fluid flow connection with the top end (15) of the injector (13); and a solenoid valve (25) interposed in the feed duct (20) between the precursor gas outlet (17) and the injector (13), immediately upstream from the top end (15) of the injector (13).
机译:一种用于通过等离子体增强化学气相沉积在容器( 2 )内沉积一层屏障效应材料的机器( 1 ),该机器( 1 )包括:处理单元( 4 ),用于接收容器( 2 )并配备有电磁波发生器( 11 );前体气体出口( 17 );用于将所述前体气体注入容器( 2 )的注入器( 13 ),所述注入器( 13 )具有底端( 14 )打开到容器( 2 )和相对的顶端( 15 );前体气体进料管( 20 )使前体气体出口( 17 )与流体的顶端( 15 )流体连通喷油器( 13 );电磁阀( 25 )插在前体气体出口( 17 )和喷射器( 20 )中> 13 ),紧接在进样器( 13 )顶端( 15 )的上游。

著录项

  • 公开/公告号US7887891B2

    专利类型

  • 公开/公告日2011-02-15

    原文格式PDF

  • 申请/专利权人 JEAN-MICHEL RIUS;

    申请/专利号US20060996204

  • 发明设计人 JEAN-MICHEL RIUS;

    申请日2006-07-24

  • 分类号H05H1/24;

  • 国家 US

  • 入库时间 2022-08-21 18:09:58

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号