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Preparation of single-crystalline polyalkylthiophene structures by surface-induced self-assembly

机译:表面诱导自组装制备单晶聚烷基噻吩结构

摘要

A high quality single-crystalline polyalkylthiophene structure can be easily prepared by the inventive method which comprises: (i) dissolving polyalkylthiophene in an organic solvent at a temperature ranging from 50 to 100° C., sequentially quenching the polyalkylthiophene solution at a temperature ranging from 25 to 40° C. and then at −5 to 15° C., to obtain a self-seeding polyalkylthiophene solution; and (ii) applying the self-seeding polyalkylthiophene solution obtained in step (i) to one surface of a nano-template having a hydrophobic supramolecule coating layer formed thereon to induce self-assembly and crystallization of polyalkylthiophene on the surface.
机译:可以通过本发明的方法容易地制备高质量的单晶聚烷基噻吩结构,该结构包括:(i)将聚烷基噻吩在50至100℃的温度范围内溶解在有机溶剂中,随后在25〜40℃,然后在-5〜15℃下,获得自种的聚烷基噻吩溶液。 (ii)将步骤(i)中获得的自种聚烷基噻吩溶液施涂于其上形成有疏水超分子涂层的纳米模板的一个表面上,以在表面上诱导聚烷基噻吩的自组装和结晶。

著录项

  • 公开/公告号US7892355B2

    专利类型

  • 公开/公告日2011-02-22

    原文格式PDF

  • 申请/专利权人 KILWON CHO;DO HWAN KIM;

    申请/专利号US20070894169

  • 发明设计人 KILWON CHO;DO HWAN KIM;

    申请日2007-08-20

  • 分类号C30B19/12;

  • 国家 US

  • 入库时间 2022-08-21 18:09:00

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