A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
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机译:用于形成光刻工艺的抗反射涂层的组合物,其使用至多200 nm的曝光光进行光刻处理,该组合物包含通过将具有式R R(6)的含硅-硅键的硅烷化合物水解缩合而获得的含硅聚合物。 -m) Sub> Si 2 Sub> X m Sub>其中R为一价烃基,X为烷氧基,烷酰氧基或卤素,m为3至6。可以将上面的光致抗蚀剂膜构图成令人满意的轮廓,并且相对于有机材料具有很高的刻蚀选择性,从而可以高精度地加工衬底。
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