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Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
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机译:通过单多晶硅工艺形成高薄层电阻和高电容电容器
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摘要
A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.
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