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Method for creating mask layout data, apparatus for creating mask layout data, and method for manufacturing semiconductor device
Method for creating mask layout data, apparatus for creating mask layout data, and method for manufacturing semiconductor device
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机译:用于创建掩模版图数据的方法,用于创建掩模版图数据的设备以及用于制造半导体器件的方法
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摘要
According to mask layout data created for a particular factory facility, transistors constituting a semiconductor device are classified into multiple groups depending on the gate length. Thereafter, the concentration of impurity introduced into a channel layer is set for each group, and thereby the gate length-threshold characteristics of a transistor are controlled. An overlapping area of a gate electrode and an element region of a certain group is extracted from mask layout data. The overlapping area is expanded to determine the shape of a mask used in injecting impurity in a channel layer. The data on the mask shape is then added to the mask layout data.
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