首页> 外国专利> Solid-state image sensing device including reset circuitry and image sensing device including the solid-state image sensing device and method for operating the same

Solid-state image sensing device including reset circuitry and image sensing device including the solid-state image sensing device and method for operating the same

机译:包括复位电路的固态图像感测装置和包括该固态图像感测装置的图像感测装置及其操作方法

摘要

An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal Φ V is given, an MOS transistor T4is turned on, and image data is output. A signal Φ RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.
机译:本发明的目的是提供一种固态图像感测装置,该固态图像感测装置被配置为在复位时改变施加给光电转换部的偏置电压,从而可以保持复位之后光电转换部的操作状态。恒定条件,无论入射光量如何。为了实现该目的,提供了MOS晶体管T 5 。 MOS晶体管T 5 的漏极与MOS晶体管T 2 的栅极和漏极以及MOS晶体管T 5 的源极连接。 B>配置为施加直流电压VRS。在此,给出信号ΦV,MOS晶体管TB 4导通,并输出图像数据。给定信号ΦRS,并且MOS晶体管T 5 导通。结果,MOS晶体管T 2 的栅极电压Vg被保持为恒定电压值。然后,注视像素的复位操作。

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