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Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same

机译:具有改善的电特性的薄膜晶体管阵列基板及其制造方法

摘要

A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
机译:提供了一种薄膜晶体管阵列基板及其制造方法,该薄膜晶体管阵列基板可以具有高的电荷迁移率并且可以为宽显示装置实现均匀的电特性。薄膜晶体管阵列基板包括:具有在绝缘基板上形成的沟道的氧化物半导体层;与氧化物半导体层重叠的栅电极;设置在该氧化物半导体层与栅电极之间的栅绝缘膜;以及形成的钝化膜。在氧化物半导体层和栅电极上。栅极绝缘膜和钝化膜中的至少一个包含含氟硅。

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