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Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
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机译:具有改善的电特性的薄膜晶体管阵列基板及其制造方法
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摘要
A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
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