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VCSEL array device and method for manufacturing the VCSEL array device

机译:VCSEL阵列器件及制造该VCSEL阵列器件的方法

摘要

Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a longitudinal direction. Plural mesa portions are formed on the substrate by selectively removing at least a portion of the first multilayer reflective film, active layer, and second multilayer reflective film. A selectively oxidized region is formed in at least one of the first multilayer reflective film and the second multilayer reflective film. The VCSEL array device further includes an interlayer insulating film that covers at least a side portion and a bottom portion of the mesa portions, and a surface protecting film that covers the interlayer insulating film. The surface protecting film has plural grooves formed along a longitudinal direction of the substrate in which at least a portion of the surface protecting film is removed.
机译:提供一种VCSEL阵列器件,其至少包括第一多层反射膜,有源层和第二多层反射膜,该第一多层反射膜,有源层和第二多层反射膜形成在沿纵向方向延伸的基板上。通过选择性地去除第一多层反射膜,有源层和第二多层反射膜的至少一部分,在基板上形成多个台面部分。在第一多层反射膜和第二多层反射膜中的至少一个中形成选择性氧化的区域。 VCSEL阵列装置还包括:层间绝缘膜,其覆盖台面部分的至少侧部和底部;以及表面保护膜,其覆盖层间绝缘膜。表面保护膜具有沿着基板的纵向方向形成的多个凹槽,其中至少部分表面保护膜被去除。

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