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VCSEL ARRAY DEVICE AND METHOD FOR MANUFACTURING THE VCSEL ARRAY DEVICE

机译:VCSEL阵列装置及制造该VCSEL阵列装置的方法

摘要

Provided is a VCSEL array device (20) that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate (22) that extends in a longitudinal direction. Plural mesa portions (24) are formed on the substrate by selectively removing at least a portion of the first multilayer reflective film, active layer, and second multilayer reflective film. A selectively oxidized region is formed in at least one of the first multilayer reflective film and the second multilayer reflective film. The VCSEL array device further includes an interlayer insulating film that covers at least a side portion and a bottom portion of the mesa portions, and a surface protecting film (32) that covers the interlayer insulating film. The surface protecting film (32) has plural grooves (30) formed along a longitudinal direction of the substrate in which at least a portion of the surface protecting film is removed.
机译:提供一种VCSEL阵列装置(20),其至少包括第一多层反射膜,有源层和第二多层反射膜,该第一多层反射膜,有源层和第二多层反射膜形成在沿纵向方向延伸的基板(22)上。通过选择性地去除第一多层反射膜,有源层和第二多层反射膜的至少一部分,在基板上形成多个台面部分(24)。在第一多层反射膜和第二多层反射膜中的至少一个中形成选择性氧化的区域。 VCSEL阵列装置还包括:至少覆盖台面部分的侧面部分和底部的层间绝缘膜;以及覆盖该层间绝缘膜的表面保护膜(32)。表面保护膜(32)具有沿着基板的长度方向形成的多个凹槽(30),在该凹槽中至少去除了一部分表面保护膜。

著录项

  • 公开/公告号KR101160530B1

    专利类型

  • 公开/公告日2012-06-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080090117

  • 申请日2008-09-12

  • 分类号H01S5/183;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:53

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