u=(Cc/Ca)×(Wa/Wc) (1)where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement."/>
Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
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Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
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机译：电介质膜结构，使用电介质膜结构的压电致动器和喷墨头
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摘要
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2:u=(Cc/Ca)×(Wa/Wc) (1)where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
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机译：本发明提供一种电介质膜结构，该电介质膜结构具有基板和设置在该基板上的电介质膜，并且该电介质膜相对于基板具有（001）面取向，并且下式（1）中的值u关于介电膜的实数大于2：<？in-line-formulae description =“ In-line Formulae” end =“ lead”？> u =（ C c / C a ）×（ W a / W c ）（1）<？in-line-formulae description =“ In-line Formulae” end =“ tail”？>其中，C c 是在平面外X射线衍射测量中介电膜（001'）面的峰的计数值（此处1'是选择的自然数）因此C c 变为最大值）; C a 是在面内X射线衍射测量中介电膜的（h'00）面的峰的计数（这里，h'是选择为C的自然数） c 变为最大值）; W c 是在面外摇摆曲线X射线衍射测量中介电膜的（001'）面的峰的半值宽度; W a 是面内摇摆曲线X射线衍射测定中的介电膜的（h'00）面的峰的半值宽度。
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