SEMICONDUCTOR SUBSTRATE TRANSFER / Treatment-TUNNEL ESTABLISHMENT WHICH IN ITS OPERATION IN MULTIPLE STRIP-SHAPED TOP SLOT-SECTIONS IT ABOVE THE SUCCESSIVE, UNINTERRUPTED BENEATH ALONG moving SEMICONDUCTOR SUBSTRATE-SECTIONS UNINTERRUPTED PLACE OF HEAT TREATMENT UNDER THEM OF VIBRATION CONDITION IN A PRECEDING PORTION THEREOF applied LAYER OF THE COMBINATION OF WEAR MEDIUM AND LIQUID MATTER OF SEMICONDUCTOR SUBSTANCE.