METHOD FOR PREPARING SEMI-CONDUCTING FILMS OF QUATERNARY OR SUPERIOR ALLOYS OF THE IB-IIIA-VIA GROUPS.

摘要

A method for producing a quaternary or semiconductor alloy semiconductor film of the IB-IIIA VIA groups, the method comprising the steps of: (i) providing a metal film comprising a mixture of metals of group IB and group IIIA; (ii) thermally treating the metal film in the presence of a source of an element of the VIA group, namely Se (hereinafter referred to as VIA1) under conditions to control the reaction between VIA1 and the metals in the mixture of the metal film with in order that the reaction does not proceed to its completion to form fully reacted ternary alloys in the absence of binary alloys, but a first film is formed comprising a mixture of at least one binary alloy selected from the group consisting of an alloy of the groups IB-VIA1, an alloy of groups IIIA-VIA1 and at least one ternary alloy of groups IB-IIIA-VIA1; (iii) thermally treat the first film in the presence of a source of an element of the VIA group (hereinafter referred to as VIA2) which is a different element of the VIA1, namely S, under conditions to convert the first film of the stage ( ii) in a second film comprising at least one alloy selected from the group consisting of an alloy of groups IB-VIA1-VIA2, an alloy of groups IIIA-VIA1-VIA2 and the at least single ternary alloy of groups IB -IIIA-VIA1 of stage (ii); and (iv) heat treating the second film of step (iii) to form a semiconductor film of quaternary alloy or higher of the IB-IIIA-VIA1-VIA groups