QUANTUM NANO-STRUCTURE SEMICONDUCTOR LASER AND QUANTUM NANO-STRUCTURE ARRAY

摘要

On a grooved semiconductor substrate having a plurality of V-groovesindividually extended in directions perpendicular to a direction Is of advanceof anoscillated laser beam and mutually disposed in parallel along the direction Isof advanceof the laser beam, a plurality of quantum wires are formed on the V-grooves byselectivegrowth of a Group III-V compound. The plurality of quantum wires are adaptedto serveas limited-length active layer regions mutually disposed in parallel along thedirectionIs of advance of the laser beam with a period of an integer times of a quarterwavelengthin a medium of a laser active layer and individually corresponding to stripewidths oflaser. Consequently, a quantum nano-structure semiconductor laser satisfyingat leastone, or preferably both, of the decrease of a threshold and the stabilizationof anoscillation frequency as compared with a conventional countertype can beprovided.