INFRARED DETECTOR WITH EXTENDED SPECTRAL RESPONSE IN THE VISIBLE FIELD

摘要

The invention relates to an infrared detector that comprises SWIR semiconducting materials which are sensitive to wavelengths lower than about 2.5 microns, said detector comprising a stack of semiconducting layers containing III-V materials defining a PIN photodiode, said stack including at least: one so-called lower exposed electric contact used as an optical window; and one detection layer sensitive to said wavelengths; characterised in that the so-called lower contact includes at least one pseudomorphic layer of n-doped III-V material(s) with an indirect gap or mesh-adjusted with a substrate used as a transitory substrate that can be made of an InP or GaAs III-V material, or of silicon or germanium.