首页> 外国专利> A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS

A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS

机译:在溶液中结晶半导体中掺入碱金属的简单路线

摘要

A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
机译:用于生产半导体的前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属化物中的至少一种。一种生产用于生产半导体的前驱体溶液的方法,包括制备第一前驱体溶液,其将碱金属或碱金属化合物中的至少一种溶解在第一溶剂中;制备第二前驱体溶液,其金属硫属化物溶解在第一溶剂中。第二溶剂,并结合第一和​​第二前体溶液以获得用于生产半导体的前体溶液。一种制造半导体器件的方法,包括提供用于在子结构上制造半导体层的前体溶液,以及在子结构上形成前体溶液的层。前体溶液包括溶解在溶剂中的碱金属或碱金属化合物和溶解在溶剂中的金属硫属化物中的至少一种。

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