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DIFFERENTIAL NITRIDE PULLBACK TO CREATE DIFFERENTIAL NFET TO PFET DIVOTS FOR IMPROVED PERFORMANCE VERSUS LEAKAGE
DIFFERENTIAL NITRIDE PULLBACK TO CREATE DIFFERENTIAL NFET TO PFET DIVOTS FOR IMPROVED PERFORMANCE VERSUS LEAKAGE
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机译:差分氮化物回拉以将差分NFET创建为PFET图案,以改善性能与泄漏之间的关系
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摘要
Disclosed are embodiments of an integrated circuit structure with field effect transistors having differing divot features at the isolation region-semiconductor body interfaces so as to provide optimal performance versus stability (i.e., optimal drive current versus leakage current) for logic circuits, analog devices and/or memory devices. Also disclosed are embodiments of a method of forming the integrated circuit structure embodiments. These method embodiments incorporate the use of a cap layer pullback technique on select semiconductor bodies and subsequent wet etch process so as to avoid (or at least minimize) divot formation adjacent to some but not all semiconductor bodies.
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