Fabrication of porogen residue free and mechanically robust low-k materials

摘要

A method is disclosed to produce a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapour Deposition (PE-CVD) or Chemical Vapour Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200 °C up to 350 °C to remove all the porogens and then performing a UV assisted thermal curing step.