TERAHERTZ RADIATION ANALYSIS DEVICE AND METHOD OF ANALYZING TERAHERTZ RADIATION

摘要

Provided is a method of analyzing terahertz radiation capable of deriving the physical properties of materials for a semiconductor without using special additional facilities. In the method of analyzing terahertz radiation, pulse light is irradiated onto a sample when a magnetic field is being applied, and time waveforms (R_sp, R_pp) of reflected waves reflected from the sample are detected (S6 to S7, S9 to S10). Also, pulse light is irradiated onto the sample when no magnetic field is being applied, and time waveforms (R_p, R_s) of reflected waves reflected from the sample are detected (S1 to S2, S3 to S4). Further, based on the time waveforms (R_p, R_s, R_sp, R_pp) the diagonal component (ε_xx) and the non-diagonal component (ε_xy) of a complex permittivity tensor are derived when a magnetic field is being applied to the sample (S5, S8, S11 to S12). Thereby, the physical properties of materials for a sample are derived (S13), which includes the diagonal component (ε_xx) and the non-diagonal component (ε_xy) as parameters.