首页> 外国专利> METHOD AND APPARATUS FOR PURIFYING METALLURGICAL GRADE SILICON BY DIRECTIONAL SOLIDIFICATION AND FOR OBTAINING SILICON INGOTS FOR PHOTOVOLTAIC USE

METHOD AND APPARATUS FOR PURIFYING METALLURGICAL GRADE SILICON BY DIRECTIONAL SOLIDIFICATION AND FOR OBTAINING SILICON INGOTS FOR PHOTOVOLTAIC USE

机译:定向凝固法纯化冶金级硅并获得光电子硅锭的方法和装置

摘要

A method and an apparatus for purification of metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use. The method comprises a preheating step, up to a temperature that is higher than the melting point of silicon, of a quartz crucible (18) that is accommodated in a containment enclosure (19) arranged inside a chamber (4) of a furnace. The chamber (4) of the furnace is delimited by a covering structure (3) and by a footing (2), which can move with respect to each other, or vice versa, toward or away from each other along a vertical direction respectively for opening and closing the chamber (4). Heating occurs by way of heating means (10) of the electric type, which are associated with the walls of the covering structure (3). The metallurgical grade silicon obtained at the end of a carbon reduction cycle in a carbon reduction furnace, from which it exits in the molten state, is transferred in the molten state directly into the quartz crucible (18) thus preheated inside the furnace chamber, which is closed and inside which an atmosphere of inert gas at a pressure that is higher than the atmospheric pressure is generated. Transfer of the silicon in the molten state occurs through a barrier of at least one inert gas that is generated proximate to at least one opening (13) formed in the top (7b) of the covering structure (3). The method then comprises a step for directional solidification of the silicon in the molten state, by removing heat from the bottom of the quartz crucible and by means of the selective control of the heating means of the electric type and the modulation of the power delivered by them, until the silicon solidifies completely in an ingot. During the solidification step, the furnace chamber is closed and an atmosphere of an inert gas at a pressure that is higher than atmospheric pressure is maintained inside it. At the end of solidification, the quartz crucible (18) accommodated in the containment enclosure (19) and containing the ingot thus obtained is extracted from the furnace chamber, which is opened by removing the covering structure (3) from the footing (2).
机译:一种通过定向凝固提纯冶金级硅并获得用于光伏用途的硅锭的方法和设备。该方法包括石英坩埚(18)的预热步骤,直到温度高于硅的熔点,该石英坩埚被容纳在布置在炉子的腔室(4)内部的安全壳(19)中。炉子的腔室(4)由一个覆盖结构(3)和一个底座(2)界定,它们可以相对彼此相对移动,反之亦然,它们可以分别沿垂直方向彼此相对或相互远离。打开和关闭腔室(4)。加热通过电类型的加热装置(10)进行,该加热装置与覆盖结构(3)的壁相关联。在碳还原炉中的碳还原循环结束时获得的冶金级硅,以熔融态从中退出,然后以熔融态直接转移到石英坩埚(18)中,从而在炉室内进行预热,封闭该封闭腔,并在内部产生高于大气压力的惰性气体气氛。熔融态硅的转移通过至少一种惰性气体的阻挡而发生,该惰性气体在覆盖结构(3)的顶部(7b)的至少一个开口(13)附近产生。该方法然后包括通过从石英坩埚的底部除去热量并且借助于对电类型的加热装置的选择性控制和对由加热装置输送的功率的调制的定向凝固的熔融态硅的步骤。直到硅在晶锭中完全固化。在固化步骤中,关闭炉腔,并在其内部保持惰性气体的气氛,该气氛的压力高于大气压。在凝固结束时,将容纳在密闭罩(19)中并容纳如此获得的铸锭的石英坩埚(18)从炉腔中取出,通过从底座(2)上取下覆盖结构(3)来打开石英坩埚。 。

著录项

  • 公开/公告号EP2297035A1

    专利类型

  • 公开/公告日2011-03-23

    原文格式PDF

  • 申请/专利权人 N.E.D. SILICON S.P.A.;

    申请/专利号EP20090765732

  • 发明设计人 PIZZINI SERGIO;

    申请日2009-05-27

  • 分类号C01B33/025;C01B33/037;C30B13/00;

  • 国家 EP

  • 入库时间 2022-08-21 17:55:04

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