首页>
外国专利>
SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION
SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION
展开▼
机译:通过定向凝固生长单晶硅锭的系统和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.
展开▼