首页> 外国专利> METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, MASK HAVING SUBMILLIMETRIC APERTURES, AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID

METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, MASK HAVING SUBMILLIMETRIC APERTURES, AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID

机译:用于制造具有亚微米导电网格的亚微米孔的掩膜,具有亚微米孔径和微米导电网格的掩膜的方法

摘要

The invention relates to a method for manufacturing a mask (1) having submillimetric apertures (10), wherein: - a solution of stabilized colloidal nanoparticles dispersed in a solvent is deposited for a mask layer, the particles having a given vitreous transition temperature Tg; - the mask layer is dried at a temperature lower than said temperature Tg until a mask having a two-dimensional array of submillimetric apertures is obtained with substantially straight mask area edges in a so-called array mask area; - a free mask area is formed on said surface through the mechanical and/or optical shrinkage of at least one peripheral portion of the array mask area. The invention also relates to said array mask (1) and to the grid with an electrically conductive solid area thus obtained.
机译:本发明涉及一种用于制造具有亚毫米级孔(10)的掩模(1)的方法,其中:-沉积稳定的胶态纳米颗粒分散在溶剂中的溶液用于掩模层,所述颗粒具有给定的玻璃化转变温度Tg; -在低于所述温度Tg的温度下干燥掩模层,直到获得具有亚微米级孔的二维阵列的掩模,在所谓的阵列掩模区域中具有基本上笔直的掩模区域边缘; -通过阵列掩模区域的至少一个外围部分的机械和/或光学收缩在所述表面上形成自由掩模区域。本发明还涉及所述阵列掩模(1)以及具有由此获得的导电固体区域的栅格。

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