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GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE
GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE
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机译:气体监测设备,燃烧状态监测设备,变化监测设备和杂质浓度监测设备
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摘要
[Object] To provide a gas monitoring device etc. with which gas monitoring can be performed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 µm or more.;[Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5 × 1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 µm or less.
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机译:目的提供一种气体监测装置等,通过使用InP基光电二极管可以以高灵敏度进行气体监测,其中无需冷却机构就可以降低暗电流,并且灵敏度可以扩展到1.8 µm的波长。 [解决方案]吸收层3具有由III-V族半导体组成的多量子阱结构,通过在吸收层中选择性地扩散杂质元素和杂质元素的浓度来形成pn结15。吸收层中的α为5×1016 / cm 3以下。气体监视装置通过接收至少一个波长为3μm以下的光来检测气体中所含的气体成分等。
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