SEMICONDUCTOR DEVICE METAL CONTACT FORMING METHOD, CAPABLE OF PREVENTING THE GENERATION OF A BRIDGE DURING FORMING THE METAL WITH THE SEAM

摘要

PURPOSE: A semiconductor device metal contact forming method is provided to prevent the generation of the bridge during forming the metal contact by removing the seam which occurs in the intermediate layer using a barrier layer.;CONSTITUTION: A capacitor having the cylinder type storage electrode(150) is formed on a semiconductor substrate(100). An intermediate insulation layer(180) is formed on the result material formed with the capacitor. A contact hole is formed to form the metal contact by etching the intermediate insulation layer. A barrier film(200) consisting of the tantalum oxide is formed on the sidewall of the contact hole.;COPYRIGHT KIPO 2011