Method for Preparing Metal Doped Transparent Conductive Oxide Thin Film and Thin Film Transistor Using the Same

摘要

PURPOSE: A method for manufacturing a metal-doped transparent conductive oxide thin film and a thin film transistor using the same are provided to drive the thin film transistor at a low voltage by adjusting the resistance distribution of the transparent conductive oxide thin film. CONSTITUTION: Metal and oxide are simultaneously deposited on a substrate. An oxide film is formed. The metal is doped into the oxide layer. The metal is selected from a group including Mo, Ti, Cu, Sr, Ge, Mg, Y, Zr, B, V, Ta, Tl, Ir, Te, Sb, Cr, Fe, Co, Ru, Ag, Au, Pt, Me, Ni, Sn, Bi, Al, Ga and In. The oxide is selected from a group including ZnO, SnO2, Zn-Sn-O, Ga2O3 and In2O3.