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OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, CAPABLE OF STABLY READING OUT DATA ACCORDING TEMPERATURE CHANGE

机译:一种非易失存储器的操作方法,能够根据温度变化稳定地读出数据

摘要

PURPOSE: An operation method of a nonvolatile memory device is provided to secure a stable read margin by performing a reading operation of a compensated voltage.;CONSTITUTION: Data to be stored is inputted through an IO buffer unit(S601). A temperature data measured at a temperature information generator is stored(S603). A program operation is performed so that the data is stored in a memory cell(S605). A verification operation of a programmed cell is performed(S607). If the verification fails, a program voltage is increased according to ISPP(Increasing Step Pulse Program) mode(S609).;COPYRIGHT KIPO 2011
机译:目的:提供一种非易失性存储器件的操作方法,以通过执行补偿电压的读取操作来确保稳定的读取余量。组成:要存储的数据通过IO缓冲单元输入(S601)。存储在温度信息发生器处测量的温度数据(S603)。执行编程操作,以便将数据存储在存储单元中(S605)。执行编程单元的验证操作(S607)。如果验证失败,则根据ISPP(递增步长脉冲编程)模式增加编程电压(S609)。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110001580A

    专利类型

  • 公开/公告日2011-01-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090059156

  • 发明设计人 HAN JUNG CHUL;JEONG BYOUNG KWAN;

    申请日2009-06-30

  • 分类号G11C16/34;G11C16/26;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:44

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