首页> 外国专利> METHOD FOR MANUFACTURING A MULTI-LAYER DEPOSITED CONDENSER, CAPABLE OF UNIFORMLY FORMING STACKED FACES BY ELIMINATING THICKNESS DIFFERENCES WITH RESPECT TO THE FILM OF AN INNER ELECTRODE

METHOD FOR MANUFACTURING A MULTI-LAYER DEPOSITED CONDENSER, CAPABLE OF UNIFORMLY FORMING STACKED FACES BY ELIMINATING THICKNESS DIFFERENCES WITH RESPECT TO THE FILM OF AN INNER ELECTRODE

机译:通过消除关于内部电极膜的厚度差异来制造能够均匀形成叠层面板的多层沉积式冷凝器的方法

摘要

PURPOSE: A method for manufacturing a multi-layer deposited condenser is provided to reduce the generation of voids in a ceramic material by implementing an epi-growing under a vacuum condition.;CONSTITUTION: A wafer is cleaned(S1). The number of deposition is defined in order to the number of layers with respect to an inner electrode pattern and a dielectric layer(S2). The electrode pattern is printed on the cleaned wafer(S3). The dielectric layer is deposited on the electrode pattern through an atomic layer deposition method(S4). An annealing process is implemented in order to thermally treat the dielectric layer(S5). The deposition process and the annealing process are repeatedly implemented(S6). An outer electrode is deposited(S7). A cutting process is implemented(S8).;COPYRIGHT KIPO 2011
机译:目的:提供一种用于制造多层沉积冷凝器的方法,以通过在真空条件下进行外延生长来减少陶瓷材料中空隙的产生。;组成:清洗晶片(S1)。为了相对于内部电极图案和电介质层的层数来定义沉积数(S2)。将电极图案印刷在清洁的晶片上(S3)。通过原子层沉积方法将电介质层沉积在电极图案上(S4)。实施退火工艺以热处理介电层(S5)。重复进行沉积工艺和退火工艺(S6)。沉积外部电极(S7)。实施了切割过程(S8)。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110007294A

    专利类型

  • 公开/公告日2011-01-24

    原文格式PDF

  • 申请/专利权人 KIM HYUNG TAE;

    申请/专利号KR20090064744

  • 发明设计人 CHOI MAN HO;KOO CHI SUNG;KIM HYUNG TAE;

    申请日2009-07-16

  • 分类号H01G4/30;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:43

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号