SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING THE SAME, CAPABLE OF REDUCING THE CONTACT RESISTANCE OF A LANDING PLUG BY REDUCING THE ASPECT RATIO OF A LANDING PLUG

摘要

PURPOSE: A semiconductor device and a method for forming the same are provided to prevent a self-align contact fail and a gate induced drain leakage phenomenon by forming a dummy gate on the upper side of a buried gate as an etching barrier.;CONSTITUTION: An element isolation film defines an active region(12) on a semiconductor substrate. A plurality of buried gates(20) is formed to cross a plurality of active regions in a transversal direction. A dummy gate(30) is formed on the upper side of the buried gates. A landing plug(46) is formed on the junction region of the semiconductor substrate. An interlayer insulating film(42) is formed on the upper side of the semiconductor substrate.;COPYRIGHT KIPO 2011