首页> 外国专利> BSI IMAGE SENSOR AND A METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF IMPROVING PRODUCTIVITY

BSI IMAGE SENSOR AND A METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF IMPROVING PRODUCTIVITY

机译:可提高生产率的bsi图像传感器和制造图像传感器的方法

摘要

PURPOSE: A BSI image sensor and a method for manufacturing an image sensor are provided to reduce manufacturing costs by forming a trench for connecting metal wires to a semiconductor substrate and an epi layer.;CONSTITUTION: A semiconductor substrate is classified into a pixel region and a pad region. The epi layer(110) is formed on the semiconductor substrate. A photo diode(117) is formed at the active region between element isolation films in the pixel region. An insulating material layer(139) comprises a plurality of metal wirings formed on the epi layer In the pad region, a tungsten plug connects the plural metal wirings to the semiconductor substrate and the epi layer. A handle wafer is bonded with the insulating material layer including the plural metal wires.;COPYRIGHT KIPO 2011
机译:目的:提供一种BSI图像传感器及其制造方法,以通过形成用于将金属线连接到半导体衬底和外延层的沟槽来降低制造成本。垫区域。外延层(110)形成在半导体衬底上。在像素区域中的元件隔离膜之间的有源区域处形成光电二极管(117)。绝缘材料层(139)包括在外延层上形成的多条金属布线。在焊盘区域中,钨塞将多条金属布线连接到半导体衬底和外延层。手柄晶片与包括多条金属线的绝缘材料层接合。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110018596A

    专利类型

  • 公开/公告日2011-02-24

    原文格式PDF

  • 申请/专利权人 DONGBU HITEK CO. LTD.;

    申请/专利号KR20090076135

  • 发明设计人 CHOI SUN;

    申请日2009-08-18

  • 分类号H01L27/14;

  • 国家 KR

  • 入库时间 2022-08-21 17:52:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号