IMPROVED MANUFACTURING METHOD OF CRYSTAL MATERIALS ON A FLAT SURFACE INCLUDING A SEMICONDUCTOR CRYSTAL MATERIAL AND STRUCTURES

摘要

PURPOSE: An improved manufacturing method of crystal materials and structures are provided to reduce roughness by generating process parameters to reduce impurities on an interface between first and second semiconductor crystal materials.;CONSTITUTION: A composite structure includes a first semiconductor crystal material on a second semiconductor crystal material with a high aspect ratio. The composite structure has a flat surface. A strained second semiconductor crystal material(140) is arranged on the first semiconductor crystal material on the flat surface. The surface of the first semiconductor crystal material has the surface roughness of 5 nm or less. The interface between the first and second semiconductor crystal materials has the reduced impurity density.;COPYRIGHT KIPO 2011