首页> 外国专利> SELECTIVE ASSEMBLED METHOD OF NANO-MATERIALS BY USING ONLY PHOTOLITHOGRAPHY AND A FABRICATION METHOD OF A NANO-STRUCTURE MULTICHANNEL FET DEVICES USING THEREOF

SELECTIVE ASSEMBLED METHOD OF NANO-MATERIALS BY USING ONLY PHOTOLITHOGRAPHY AND A FABRICATION METHOD OF A NANO-STRUCTURE MULTICHANNEL FET DEVICES USING THEREOF

机译:仅利用光照相法选择组装纳米材料的方法及其使用的纳米结构多通道FET器件的制造方法

摘要

PURPOSE: A selective assembled method of nano-materials by using only photolithography and a fabrication method of a nano-structure multichannel FET devices using thereof are provided to reduce a process step by enabling nano particles to be attached to a substrate through a photolithography and a solution process.;CONSTITUTION: In a selective assembled method of nano-materials by using only photolithography and a fabrication method of a nano-structure multichannel FET devices using thereof, an oxide film(SiO2) is formed on a silicon substrate. A random PR pattern is formed on the oxide film through the photo lithography process(S110). A nano-material is absorbed to the surface of a sample through a solution process(S120). A photoresist pattern on the surface of the sample having the nano particles is removed(S130). A multichannel FET device is manufactured by using selectively patterned nano-material.;COPYRIGHT KIPO 2011
机译:用途:仅通过光刻法选择性组装纳米材料的方法和使用该方法的纳米结构多通道FET器件的制造方法,可通过使纳米颗粒通过光刻法和光刻胶附着到基板上来减少工艺步骤。组成:在仅使用光刻的纳米材料的选择性组装方法和使用该方法的纳米结构多通道FET器件的制造方法中,在硅基板上形成氧化膜(SiO2)。通过光刻工艺在氧化物膜上形成随机PR图案(S110)。通过溶液处理将纳米材料吸收到样品的表面(S120)。去除具有纳米颗粒的样品表面上的光致抗蚀剂图案(S130)。通过使用选择性构图的纳米材料制造多通道FET器件。; COPYRIGHT KIPO 2011

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