CIRCUIT AND METHOD FOR GENERATING A REFERENCE VOLTAGE, A PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND A READ OPERATION METHOD USING THE SAME, CAPABLE OF ENOUGH SECURING A SENSING MARGIN

摘要

PURPOSE: A circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same are provided to generate a reference voltage for a read operation based on the resistance change of a phase change material.;CONSTITUTION: In a circuit and method for generating a reference voltage, a phase change random access memory apparatus and a read operation method using the same, at least one cell is composed of a variable resistance memory cell. A write driver(120) for the reference cell writes data in the reference cell(110). A sense amplifier(130) for a reference cell is read out data stored in the reference cell. A voltage compensation part(140) outputs a compensation reference voltage by controlling the reference voltage.;COPYRIGHT KIPO 2011