首页> 外国专利> METHOD FOR MANUFACTURING A THIN FILM THERMOELECTRIC ENERGY CONVERSION MODULE WHICH IS SERIALLY CONNECTED TO A P TYPE SEMICONDUCTOR PATTERN AND AN N TYPE SEMICONDUCTOR PATTERN

METHOD FOR MANUFACTURING A THIN FILM THERMOELECTRIC ENERGY CONVERSION MODULE WHICH IS SERIALLY CONNECTED TO A P TYPE SEMICONDUCTOR PATTERN AND AN N TYPE SEMICONDUCTOR PATTERN

机译:制造薄膜热电能量转换模块的方法,该模块串行连接到P型半导体图形和N型半导体图形

摘要

PURPOSE: A method for manufacturing a thin film thermoelectric energy conversion module is provided to correct a height error and an arrangement error of an n type semiconductor pattern and a p type semiconductor pattern by using a solder ball when a substrate is bonded.;CONSTITUTION: An insulation layer(110) and an electrode layer(120) are formed on a substrate(100). A first photoresist is formed on the electrode layer. The first photoresist is patterned. A part of the insulation layer is exposed by using the patterned first photoresist. A lift-off resistor and a second photoresist are successively formed on the exposed insulation layer. The upper side of the electrode layer is partially exposed by etching the lift-off photoresistor. A first semiconductor pattern(160a) is formed on the exposed electrode layer. A first pattern is formed by removing a second photoresist pattern and the lift-off resistor. A second pattern with a second semiconductor pattern is formed. The second semiconductor pattern is opposite to the first semiconductor pattern. A solder ball is bonded between the upper side of the first pattern and the electrode layer of the substrate with the second pattern.;COPYRIGHT KIPO 2011
机译:目的:提供一种薄膜热电能量转换模块的制造方法,以在接合衬底时通过焊球校正n型半导体图案和p型半导体图案的高度误差和布置误差。在衬底(100)上形成绝缘层(110)和电极层(120)。在电极层上形成第一光刻胶。对第一光刻胶进行构图。通过使用图案化的第一光刻胶来暴露绝缘层的一部分。剥离电阻和第二光刻胶依次形成在暴露的绝缘层上。电极层的上侧通过蚀刻剥离光刻胶而部分暴露。在暴露的电极层上形成第一半导体图案(160a)。通过去除第二光刻胶图案和剥离电阻来形成第一图案。形成具有第二半导体图案的第二图案。第二半导体图案与第一半导体图案相对。在第一图案的上侧和带有第二图案的基板的电极层之间焊锡球。; COPYRIGHT KIPO 2011

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