CAPACITANCE LESS MEMORY DEVICE AND A METHOD THEREOF, CAPABLE OF IMPROVING THE MOBILITY OF ELECTRONICS

摘要

PURPOSE: A capacitance less memory device and a method thereof are provided to improve a kind effect by using a strained silicon as a silicon body.;CONSTITUTION: In a capacitance less memory device and a method thereof, 2V gate voltage is supplied to a gate electrode. A ground voltage is provided in a source region. 1.5V and 4V are applied to a drain region. A first bit is performed. The gate voltage of -1.5V is applied to a gate electrode unit. A ground voltage is provided in a source region. 1.5V and 4V are applied to a drain region. A second bit is performed.;COPYRIGHT KIPO 2011