Novel Capacitance Coupling Coefficient Measurement Methodology for Floating Gate Nonvolatile Memory Devices

摘要

A novel measurement methodology that extracts the gate capacitance coefficient of floating-gate memory cells is reported. This measurement methodology, which utilizes simple current-voltage measurements, exhibits several advantages over current methodologies. The measurement methodology has been verified using numerical simulation and measurements from two different technologies. Furthermore, a figure of merit for determining the matching performance of the equivalent transistor to the memory cell is also presented and discussed.