LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF CAPABLE OF INCREASING LIGHT EMITTING EFFICIENCY BY THE BALLISTIC TRANSPORT EFFECT OF A CHARGE

摘要

PURPOSE: A light emitting diode and manufacturing method thereof are provided to form an uneven structure on an upper semiconductor layer to reduce the total reflection in a light emitting diode, thereby increasing the light emitting efficiency of the light emitting diode.;CONSTITUTION: A first conductive lower semiconductor layer(120), an active layer(130), and a second conductive upper semiconductor layer(140) are formed on a substrate(110). A porous alumina layer(210) including a hole is formed on the upper semiconductor layer. Parts of the upper semiconductor layer, the active layer, and the lower semiconductor layer are etched to form an etching unit(260). The etching process is performed using an alumina layer as a mask.;COPYRIGHT KIPO 2011