SPDT SWITCH FOR HIGH FREQUENCY BAND SWITCHING AND ISOLATION ENHANCING METHOD CAPABLE OF REDUCING INSERTION LOSS AND ENHANCING ISOLATION

摘要

PURPOSE: An SPDT switch for high frequency band switching and isolation enhancing method are provided to select an HBT(Hetero-junction Bipolar Transistor) and an nMOS transistor respectively as a switching element and a shunt element, thereby providing superior RF(Radio Frequency) performance in a high frequency band. ;CONSTITUTION: A first HBT(310) and a second HBT(311) configures a serial switching unit. The first and second HBTs are connected to a common input terminal in series to configure an SPDT switch. A first MOS transistor(M1) and a second MOS transistor configures a current sink unit. A first shunt element(210) is made of an N type MOS transistor(M3). A second shunt element(211) is made of an N type MOS transistor(M4). The first and second shunt elements function as a switching isolation unit. A DC blocking unit is made of a first capacitor(C2) and a second capacitor(C3).;COPYRIGHT KIPO 2011