首页> 外文期刊>IEICE Transactions on Electronics >A CMOS SPDT RF Switch with 68 dB Isolation and 1.0 dB Loss Feathering Switched Resonance Network for MIMO Applications
【24h】

A CMOS SPDT RF Switch with 68 dB Isolation and 1.0 dB Loss Feathering Switched Resonance Network for MIMO Applications

机译:具有68个DB隔离的CMOS SPDT RF开关和用于MIMO应用的1.0 dB损耗羽毛交换谐振网络

获取原文
获取原文并翻译 | 示例
           

摘要

There are enlarged requirements of millimeter-wave beamforming phased-Array transceivers and high-order modulation multiinput multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-Throw (SPDT) RF switch realizes 68 dB port isolation and 1.0 dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21 dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10 dB from 8 GHz to 20 GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.
机译:毫米波波束成形相控阵收发器和大阶调制多次汇位多输出(MIMO)收发器有扩大要求。高性能集成的RF开关被视为支持信号通道分布和路径冗余的收发器最关键的组件之一。本文介绍了一种带有新型交换平行LC谐振网络的CMOS高隔离和低损耗RF开关。所提出的单极双掷(SPDT)RF开关实现了68个DB端口隔离和1.0dB插入损耗,有效面积为0.034mm2。 SPDT RF开关由两个系列分流晶体管对组成,具有身体浮动技术和交换式平行LC网络。该网络使用关闭的串联晶体管来共振OFF电容。测量的输出三阶截距(OIP3)高于21 dBm。所提出的SPDT RF开关将所有工作端口的返回损耗维持在8 GHz到20 GHz的所有工作端口。高性能SPDT RF开关以标准的65-NM CMOS技术制造。

著录项

  • 来源
    《IEICE Transactions on Electronics》 |2021年第7期|280-288|共9页
  • 作者单位

    Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

    Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

    Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

    Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

    Department of Electrical and Electronic Engineering Tokyo Institute of Technology;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CMOS; high-isolation; Ku-band; millimeter-wave; MIMO; RF switches; SPDT; switched resonance network;

    机译:CMOS;高隔离;ku波段;毫米波;MIMO;RF开关;SPDT;切换谐振网络;

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号