首页> 外国专利> COMPOSITION FOR A RESIST SUB-LAYER, A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME, AND THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURED BY THE SAME CAPABLE OF OBTAINING THE ANTI-REFLECTION CHARACTERISTIC BY INCLUDING SPECIFIC ORGANIC SILANE-BASED POLYCONDENSATE AND A SOLVENT

COMPOSITION FOR A RESIST SUB-LAYER, A METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME, AND THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURED BY THE SAME CAPABLE OF OBTAINING THE ANTI-REFLECTION CHARACTERISTIC BY INCLUDING SPECIFIC ORGANIC SILANE-BASED POLYCONDENSATE AND A SOLVENT

机译:电阻子层的组成,使用该电阻子层制造半导体集成电路装置的方法,以及使用相同的方法制造的半导体集成电路装置,都可以通过包含一个或多个基本角度的角度来获得反电特性。

摘要

PURPOSE: A composition for a resist sub-layer, a method for manufacturing a semiconductor integrated circuit device using the same, and the semiconductor integrated circuit device manufactured by the same are provided to control the refractive index and the absorbance in a wavelength range which is lower than or equal to 250nm. ;CONSTITUTION: A composition for a resist sub-layer includes organic silane-based polycondensate and a solvent. The organic silane-based polycondensate is generated from a group represented by chemical formulas 1 or 2 under acidic catalyst and alkaline catalyst. In the chemical formulas, the R1 is halogen, hydroxyl group, alkoxy group, carboxylic group, ester group, cyano group, haloalkyl sulfite group, alkylamine group, alkylsilyl amine group, or alkylsilyloxy group. The Ar1 is substituted or non-substituted C6 to C12 arylene group. The Ar2 and the Ar3 are identical or different and substituted or non-substituted C6 to C12 aryl group. The m and the n are identical or different and are respectively 0 or the integer of 1 to 5.;COPYRIGHT KIPO 2011
机译:用途:提供用于抗蚀剂子层的组合物,使用该组合物的半导体集成电路器件的制造方法以及由该组合物制造的半导体集成电路器件,以将折射率和吸收率控制在如下波长范围内:小于或等于250nm。 ;组成:用于抗蚀剂子层的组合物包含有机硅烷基缩聚物和溶剂。有机硅烷类缩聚物在酸性催化剂和碱性催化剂下由化学式1或2表示的基团产生。在化学式中,R 1为卤素,羟基,烷氧基,羧基,酯基,氰基,卤代烷基亚硫酸盐基,烷基胺基,烷基甲硅烷基胺基或烷基甲硅烷基氧基。 Ar 1是取代或未取代的C 6至C 12亚芳基。 Ar 2和Ar 3相同或不同,且为取代或未取代的C 6至C 12芳基。 m和n相同或不同,分别为0或1到5的整数。; COPYRIGHT KIPO 2011

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