首页> 外国专利> FUSE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING CONNECTION BETWEEN CUT FUSE AND ADJACENT FUSE BY FUSE RESIDUAL OF LASER CUTTING PROCESS

FUSE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING CONNECTION BETWEEN CUT FUSE AND ADJACENT FUSE BY FUSE RESIDUAL OF LASER CUTTING PROCESS

机译:半导体器件的熔断及其制造方法,能够通过激光切割过程中的熔断残余防止熔断和相邻熔断之间的连接

摘要

PURPOSE: A fuse of a semiconductor device and a manufacturing method thereof are provided to solve fuse fault occurred during fuse cutting by changing the shape of a fuse open region. ;CONSTITUTION: A number of fuse lines(205) are formed on a semiconductor substrate(200). An interlayer insulation film and a protection film(203) are formed on top of the fuse line. A fuse open region(210) is formed by etching the protection film and the interlayer insulation film in sequence. The fuse line exposed by the fuse open region is cut. The fuse open region includes a number of concave-convex parts among the fuse lines.;COPYRIGHT KIPO 2011
机译:目的:提供一种半导体器件的保险丝及其制造方法,以通过改变保险丝开口区域的形状来解决在保险丝切割期间发生的保险丝故障。组成:在半导体衬底(200)上形成许多熔丝(205)。在熔断线的顶部形成层间绝缘膜和保护膜(203)。通过依次蚀刻保护膜和层间绝缘膜来形成熔丝开放区域(210)。保险丝开路区域露出的保险丝被切断。保险丝开口区域在保险丝中包括许多凹凸部分。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110076244A

    专利类型

  • 公开/公告日2011-07-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090132898

  • 发明设计人 WOO TAKE KYUN;

    申请日2009-12-29

  • 分类号H01L23/62;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:32

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