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METHOD FOR PREVENTING PLASMA DAMAGE BY WAFER CHARGE UP, CAPABLE OF PREVENTING DAMAGE TO A GATE OXIDE
METHOD FOR PREVENTING PLASMA DAMAGE BY WAFER CHARGE UP, CAPABLE OF PREVENTING DAMAGE TO A GATE OXIDE
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机译:通过晶片充电防止等离子体损伤的方法,能够防止氧化镓的损伤
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摘要
PURPOSE: A method for preventing plasma damage by wafer charge up is provided to prevent plasma damage by forging a buffer layer neutralizing charge transferred to the backside of a wafer.;CONSTITUTION: In a method for preventing plasma damage by wafer charge up, an electrical buffer layer for re-distributed charges on a wafer backside is formed. The buffer neutralizes charges to prevent charge split. The electrical buffer layer makes positive charge implant. The electrical buffer layer is formed as a P-well.;COPYRIGHT KIPO 2011
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