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METHOD FOR FORMING A PHOTORESIST PATTERN CAPABLE OF REMOVING SUB-RESOLUTION ASSIST FEATURES ON A WAFER
METHOD FOR FORMING A PHOTORESIST PATTERN CAPABLE OF REMOVING SUB-RESOLUTION ASSIST FEATURES ON A WAFER
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机译:形成可去除晶片上子分辨率辅助特征的光致抗蚀剂图案的方法
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摘要
PURPOSE: A method for forming a photoresist pattern is provided to improve process margin of a main pattern through a first exposure process using a first mask pattern and a second exposure process using a second mask pattern. ;CONSTITUTION: A photoresist is formed on a wafer(S410). The photoresist is firstly exposed by using a first mask with a first mask pattern(S420). A first mask pattern includes light shielding main patterns and light shielding scattering bars. The firstly exposed photoresist is secondly exposed by using a second mask with a second mask pattern(S430). The second mask pattern has floodlight scattering bars on the same region as the light shielding scattering bars. The firstly and secondly exposed photoresist is developed(S440).;COPYRIGHT KIPO 2011
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