首页> 外国专利> INSULATION DEVICE OF A SINGLE CRYSTAL GROWING APPARATUS AND THE SINGLE CRYSTAL GROWING APPARATUS INCLUDING THE SAME CAPABLE OF CUTTING OFF HEAT FLOW EVEN BY USING CONVENTION OR RADIATION

INSULATION DEVICE OF A SINGLE CRYSTAL GROWING APPARATUS AND THE SINGLE CRYSTAL GROWING APPARATUS INCLUDING THE SAME CAPABLE OF CUTTING OFF HEAT FLOW EVEN BY USING CONVENTION OR RADIATION

机译:单晶生长装置和单晶生长装置的绝缘装置,包括即使使用常规或辐射也能切断热流的装置

摘要

PURPOSE: An insulation device of a single crystal growing apparatus and the single crystal growing apparatus including the same are provided to prevent degradation of a quartz furnace and increasing of a hot zone life time and to reduce process cost. ;CONSTITUTION: A single crystal growing apparatus(100) includes a chamber(110), a furnace(120), a heater(127) and a cooling tube(115). The furnace, installed within the chamber, holds a silicon solution. The heater, also installed within the chamber, heats the furnace. The cooling tube surrounds a single crystal ingot. An insulation device includes a plurality of insulation blocks separated from the first distance. The insulation device includes the first insulation layer between the insulation blocks.;COPYRIGHT KIPO 2011
机译:目的:提供一种单晶生长装置的绝缘装置和包括该绝缘装置的单晶生长装置,以防止石英炉的退化和增加热区寿命并降低工艺成本。组成:单晶生长装置(100)包括腔室(110),炉子(120),加热器(127)和冷却管(115)。安装在室内的熔炉可容纳硅溶液。也安装在室内的加热器加热炉子。冷却管围绕着一个单晶锭。绝缘装置包括与第一距离分开的多个绝缘块。绝缘装置包括位于绝缘块之间的第一绝缘层。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110080342A

    专利类型

  • 公开/公告日2011-07-13

    原文格式PDF

  • 申请/专利权人 LG SILTRON INCORPORATED;

    申请/专利号KR20100000518

  • 发明设计人 CHOI IL SOO;OH HYUN JUNG;LEE SANG HOON;

    申请日2010-01-05

  • 分类号C30B15/00;C30B35/00;C30B29/06;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:27

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