首页> 外国专利> APPARATUS AND METHOD FOR PLASMA ION IMPLANTATION OF NOBLE METALS AND METHOD OF ATTAINING NANO-SIZED NOBLE METAL COMPOSITES BY USING THE SAME

APPARATUS AND METHOD FOR PLASMA ION IMPLANTATION OF NOBLE METALS AND METHOD OF ATTAINING NANO-SIZED NOBLE METAL COMPOSITES BY USING THE SAME

机译:等离子体注入贵金属的装置和方法以及使用相同的方法捕获纳米尺寸的贵金属复合物的方法

摘要

PURPOSE: A plasma ion implantation device of noble metals and a method thereof, and a method for forming nano-sized noble metal composites by using the same are provided to form a noble metal cluster, thereby forming nano-sized noble metal composites on the surface of a dielectric object. CONSTITUTION: A vacuum chamber(110) keeps inside with the vacuum condition. A magnetron deposition source(120) is arranged in the vacuum chamber for thin film deposition. A sample mounting stand(130) faces the magnetron deposition source in the vacuum chamber. A pulse DC power supply device(140) applies pulse DC power to the magnetron deposition source. A high voltage pulse power supply device(150) applies a high voltage pulse, which is synchronized with the pulse DC power, to the sample mounting stand.
机译:目的:提供一种贵金属的等离子体离子注入装置及其方法,以及使用该方法形成纳米级贵金属复合物的方法,以形成贵金属簇,从而在表面上形成纳米级贵金属复合物。介电物体组成:真空室(110)保持真空状态。磁控管沉积源(120)布置在真空室中用于薄膜沉积。样品安装台(130)面对真空室中的磁控管沉积源。脉冲直流电源装置(140)向磁控管沉积源施加脉冲直流电源。高压脉冲电源装置(150)将与脉冲DC电源同步的高压脉冲施加到样品安装台。

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