THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES

摘要

A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.