METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE SEMICONDUCTOR LIGHT EMITTING DEVICE MADE BY THE SAME CAPABLE OF IMPROVING THE LUMINOUS EFFICIENCY AND RELIABILITY OF THE LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor light emitting device and the semiconductor light emitting device made by the same are provided to prevent a light absorbing layer on the side of a light emitting structure by performing a scribing process using a stealth laser.;CONSTITUTION: A light emitting structure is formed on the first main surface of a substrate(100) and includes a first conductive semiconductor layer(101), an active layer(102), and a second conductive semiconductor layer(103). A reflection layer(105) with at least one laser absorbing area is formed on the second main surface of the substrate. A first electrode(104a) is formed on the first conductive semiconductor layer. A second electrode(104b) is formed on the second conductive semiconductor layer.;COPYRIGHT KIPO 2011