PHASE CHANGING FILM FORMATION METHOD CAPABLE OF STABLY EMBEDDING A PHASE CHANGING FILM AND A PHASE CHANGE MEMORY DEVICE MANUFACTURING METHOD USING THE SAME

摘要

PURPOSE: A phase changing film formation method and a phase change memory device manufacturing method using the same are provided to suppress seam generation within a hole when embedding a phase changing film, thereby maintaining a constant composition ratio when performing three steps of a phase changing film formation process as deposition, etching, and deposition steps.;CONSTITUTION: A lower electrode is arranged. An interlayer insulating film including a hole on the lower electrode is arranged. A phase changing film(240) is arranged in order to embed the hole. An upper electrode(250) is arranged in the upper part of the phase changing film. The phase changing film is arranged by repeating a first deposition/etching process and second deposition process N times.;COPYRIGHT KIPO 2012