SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF CAPABLE OF IMPROVING A REFRESH PROPERTY BY REDUCING A GATE INDUCED DRAIN LEAKAGE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a resistance property by increasing a contact area between a junction area and storage node and bit line contact plugs.;CONSTITUTION: A device isolation layer(104) defining an active area(102) is formed on a semiconductor substrate(100). A buried gate(G) is formed in the device isolation layer and the active area of the semiconductor substrate. A silicon layer is formed in the active area between the buried gates. A junction area(116S,116D) is formed in the silicon layer and the active area to be overlapped with the buried gate. A bit lien contact plug(120) and a storage contact plug(124) are formed in the junction area.;COPYRIGHT KIPO 2012